An improved methodology for extracting interface state density at Si3N4/GaN
Author:
Affiliation:
1. Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA
Funder
Office of Naval Research
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/am-pdf/10.1063/1.5125645
Reference29 articles.
1. GaN-Based RF Power Devices and Amplifiers
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5. Analysis of MOCVD SiNx Passivated N-Polar GaN MIS-HEMTs on Sapphire With High $f_{max}\cdot V_{DS,Q}$
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