Author:
Sarzała Robert P.,Nakwaski Włodzimierz
Subject
General Physics and Astronomy
Cited by
5 articles.
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1. Modeling of Ga1−xInxAs1−y−zNySbz/GaAs quantum well properties for near-infrared lasers;Materials Science in Semiconductor Processing;2013-12
2. Growth of GaNxAsyP1−x−y alloys on GaP(100) by gas-source molecular beam epitaxy;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2012-03
3. Proposal of High Performance 1.55.MU.m Quantum Dot Heterostructure Laser Using InN;IEICE Transactions on Electronics;2012
4. Design and performance of 1.55 μm laser using InGaN;physica status solidi (c);2010-06-10
5. 1.55 μm laser using InN-based quantum well heterostructure;2008 International Conference on Electrical and Computer Engineering;2008