Design and performance of 1.55 μm laser using InGaN-Reference-Cited by-同舟云学术

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Design and performance of 1.55 μm laser using InGaN

Published:2010-06-10 Issue:7-8 Volume:7 Page:1825-1828
ISSN:1862-6351
Container-title:physica status solidi (c)
language:en
Short-container-title:Phys. Status Solidi (c)

Author:

Hasan Md. Tanvir,Islam Md. Jahirul,Hasan Rajib-ul-,Islam Md. Sherajul,Yeasmin Shahrina,Bhuiyan Ashraful G.,Islam Md Rafiqul,Yamamoto Akio

Publisher

Wiley

Subject

Condensed Matter Physics

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Behaviour of Raman B1 (high) mode and evaluation of crystalline quality in the InxGa1–xN alloys grown by RF-MBE;Bulletin of Materials Science;2020-10-15

2. RF-MBE and MOVPE InxGa1-xN films over the entire composition range: A study on growth method dependence;Superlattices and Microstructures;2020-04

3. Growth Mechanism of InN Nucleation Layers on Epitaxial Graphene Using Metal Organic Vapor Phase Epitaxy and Radio-Frequency Molecular Beam Epitaxy;Crystal Growth & Design;2020-01-15

4. A molten salt-based nitridation approach for synthesizing nanostructured InN electrode materials;RSC Advances;2020

5. Fabrication of InN on epitaxial graphene using RF-MBE;Journal of Applied Physics;2019-07-28

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