Fabrication of InN on epitaxial graphene using RF-MBE
Author:
Affiliation:
1. Graduate School of Electrical & Electronics Engineering, University of Fukui, Bunkyo 3-9-1, Fukui 910-8507, Japan
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5092826
Reference40 articles.
1. Indium nitride (InN): A review on growth, characterization, and properties
2. Progress in nitride semiconductors from GaN to InN—MOVPE growth and characteristics
3. Recent advances in the MOVPE growth of indium nitride
4. Unusual properties of the fundamental band gap of InN
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1. Theoretical Study on Epitaxial Growthof High-Quality III-Nitride on Graphene;2024 6th International Conference on Electrical Engineering and Information & Communication Technology (ICEEICT);2024-05-02
2. Theoretical Investigation for Growth of High Quality GaN on Epitaxial Graphene;2021 5th International Conference on Electrical Engineering and Information Communication Technology (ICEEICT);2021-11-18
3. Growth of single crystalline Si on graphene using RF-MBE: Orientation control with an AlN interface layer;Applied Surface Science;2021-05
4. Luminescence of structured InN deposited on graphene interlayer;Journal of Luminescence;2021-04
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