Solid phase epitaxy and doping of Si through Sb‐enhanced recrystallization of polycrystalline Si
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.100110
Reference8 articles.
1. Experimental study of the minority-carrier transport at the polysilicon—monosilicon interface
2. TiSi2/polycrystalline silicon: Arsenic distribution and Si grain growth
3. Solid phase epitaxial regrowth of boron‐doped polycrystalline silicon deposited by low‐pressure chemical vapor deposition
4. Solid phase epitaxy of evaporated amorphous silicon films
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1. Epitaxial zirconia thin films from aqueous precursors;Journal of Materials Research;1993-01
2. Influence of B concentration on recrystallization of polycrystalline Si;Journal of Applied Physics;1991-11
3. Ultrashallow diffusedn+pjunction using antimony for device applications;Journal of Applied Physics;1990-06-15
4. Investigations of an Antimony Doped Poly-Silicon Gate Structure for P-Type JFET Applications;MRS Proceedings;1990
5. A metal‐oxide‐silicon field‐effect transistor made by means of solid‐phase doping;Journal of Applied Physics;1989-06
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