TiSi2/polycrystalline silicon: Arsenic distribution and Si grain growth
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.339080
Reference12 articles.
1. Diffusion of arsenic in polycrystalline silicon
2. Grain‐Growth Mechanisms in Polysilicon
3. 1 µm MOSFET VLSI technology: Part VII—Metal silicide interconnection technology—A future perspective
4. MOS Compatibility of high-conductivity TaSi2/n+poly-Si gates
5. Cross‐sectional transmission electron microscopy investigation of Ti/Si reaction on phosphorus‐doped polycrystalline silicon gate
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Silicides for integrated circuits: TiSi2 CoSi2;Materials Science and Engineering: R: Reports;1993-11
2. Influence of B concentration on recrystallization of polycrystalline Si;Journal of Applied Physics;1991-11
3. Effect of dopant redistribution, segregation, and carrier trapping in As-implanted MOS gates;IEEE Transactions on Electron Devices;1990
4. Growth of Sb-Doped Epitaxial Si Layers Through Recrystallization of Poly-Si on a (100) Si Substrate;Springer Proceedings in Physics;1989
5. Solid phase epitaxy and doping of Si through Sb‐enhanced recrystallization of polycrystalline Si;Applied Physics Letters;1988-09-05
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