Solid phase epitaxy of evaporated amorphous silicon films
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.95439
Reference11 articles.
1. Shallow junctions by high‐dose As implants in Si: experiments and modeling
2. Thermal stability of electrically active dopants in laser annealed silicon films
3. Epitaxial growth of Si deposited on (100) Si
4. Solid-Phase Epitaxy of CVD Amorphous Si Film on Crystalline Si
5. SOI by CVD: Epitaxial Lateral Overgrowth (ELO) process—Review
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Silicon Homoepitaxy by Rapid Thermal Processing Chemical Vapor Deposition (RTPCVD)—A Review;Journal of The Electrochemical Society;1991-04-01
2. Dopant‐enhanced low‐temperature epitaxial growth ofinsitudoped silicon by rapid thermal processing chemical vapor deposition;Applied Physics Letters;1991-01-07
3. Growth of Sb-Doped Epitaxial Si Layers Through Recrystallization of Poly-Si on a (100) Si Substrate;Springer Proceedings in Physics;1989
4. Solid phase epitaxy and doping of Si through Sb‐enhanced recrystallization of polycrystalline Si;Applied Physics Letters;1988-09-05
5. Solid Phase Epitaxy of LPCVD Amorphous Silicon Films;Journal of The Electrochemical Society;1987-10-01
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