Hydrogen passivation of electrically active defects in diamond
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.101604
Reference7 articles.
1. Resistivity of chemical vapor deposited diamond films
2. Vapor growth of diamond on diamond and other surfaces
3. Hydrogen in crystalline semiconductors
4. Hydrogen passivation of defects in silicon ribbon grown by the edge‐defined film‐fed growth process
Cited by 325 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Enhanced reducing effect induced by biocarbon-modified magnesium silicate hydroxide for better tribologicalproperties;Wear;2024-09
2. First-principles investigation of oxidized Si- and Ge-terminated diamond (100) surfaces;The Journal of Chemical Physics;2024-08-09
3. Synthesis and nitrogen content regulation of diamond in a high-pressure hydrogen-rich environment;Chinese Physics B;2024-05-01
4. Impact of surface treatments on the electron affinity of nitrogen-doped ultrananocrystalline diamond;Applied Surface Science;2024-05
5. Sluggish Electron Transfer of Oxygen-Terminated Moderately Boron-Doped Diamond Electrode Induced by Large Interfacial Capacitance between a Diamond and Silicon Interface;JACS Au;2024-03-08
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3