Electric field control of spin re-orientation in perpendicular magnetic tunnel junctions—CoFeB and MgO thickness dependence
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4891843
Reference28 articles.
1. Design Margin Exploration of Spin-Transfer Torque RAM (STT-RAM) in Scaled Technologies
2. Spin-transfer switching in MgO-based magnetic tunnel junctions (invited)
3. Precession frequency and fast switching dependence on the in-plane and out-of-plane dual spin-torque polarizers
4. Low writing energy and sub nanosecond spin torque transfer switching of in-plane magnetic tunnel junction for spin torque transfer random access memory
5. High temperature annealing stability of magnetic properties in MgO-based perpendicular magnetic tunnel junction stacks with CoFeB polarizing layer
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1. Ferromagnetic resonance and magnetization switching characteristics of perpendicular magnetic tunnel junctions with synthetic antiferromagnetic free layers;Applied Physics Letters;2022-01-03
2. Recent Progress in the Voltage-Controlled Magnetic Anisotropy Effect and the Challenges Faced in Developing Voltage-Torque MRAM;Micromachines;2019-05-15
3. Role of CoFeB thickness in electric field controlled sub-100 nm sized magnetic tunnel junctions;AIP Advances;2018-05
4. Micromagnetic simulation of electric-field-assisted magnetization switching in perpendicular magnetic tunnel junction;AIP Advances;2017-03-09
5. Tuning coercive force by adjusting electric potential in solution processed Co/Pt(111) and the mechanism involved;Scientific Reports;2017-03-03
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