Low writing energy and sub nanosecond spin torque transfer switching of in-plane magnetic tunnel junction for spin torque transfer random access memory
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3556784
Reference13 articles.
1. A novel nonvolatile memory with spin torque transfer magnetization switching: spin-ram
2. 2Mb Spin-Transfer Torque RAM (SPRAM) with Bit-by-Bit Bidirectional Current Write and Parallelizing-Direction Current Read
3. 45nm low power CMOS logic compatible embedded STT MRAM utilizing a reverse-connection 1T/1MTJ cell
4. Advances and Future Prospects of Spin-Transfer Torque Random Access Memory
5. Magnetic Tunnel Junctions for Spintronic Memories and Beyond
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