Ferromagnetic resonance and magnetization switching characteristics of perpendicular magnetic tunnel junctions with synthetic antiferromagnetic free layers
Author:
Affiliation:
1. Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, Minnesota 55455, USA
2. Materials Science and Engineering Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA
Funder
Defense Advanced Research Projects Agency
Microelectronics Advanced Research Corporation
National Institute of Standards and Technology
National Nanotechnology Coordinated Infrastructure
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
https://aip.scitation.org/doi/am-pdf/10.1063/5.0075043
Reference43 articles.
1. A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junction
2. Switching current reduction using perpendicular anisotropy in CoFeB–MgO magnetic tunnel junctions
3. Spin torque switching of perpendicular Ta∣CoFeB∣MgO-based magnetic tunnel junctions
4. Ultrafast Spin-Transfer-Torque Switching of Synthetic Ferrimagnets
5. Simulation of Strain-Assisted Switching in Synthetic Antiferromagnetic Free Layer-Based Magnetic Tunnel Junction
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