High temperature annealing stability of magnetic properties in MgO-based perpendicular magnetic tunnel junction stacks with CoFeB polarizing layer
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3549605
Reference19 articles.
1. Magnetic tunnel junction device with perpendicular magnetization films for high-density magnetic random access memory
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3. Reducing the critical current for spin-transfer switching of perpendicularly magnetized nanomagnets
4. Current-induced magnetization reversal in nanopillars with perpendicular anisotropy
5. Perpendicular magnetic tunnel junction with tunneling magnetoresistance ratio of 64% using MgO (100) barrier layer prepared at room temperature
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