Giant Perpendicular Magnetic Anisotropy in Mo‐Based Double‐Interface Free Layer Structure for Advanced Magnetic Tunnel Junctions-Reference-Cited by-同舟云学术

Giant Perpendicular Magnetic Anisotropy in Mo‐Based Double‐Interface Free Layer Structure for Advanced Magnetic Tunnel Junctions

Published:2020-07-15 Issue:8 Volume:6 Page:2000271
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Cheng Houyi¹²^ORCID,Chen Jingle¹,Peng Shouzhong¹²,Zhang Boyu¹,Wang Zilu¹,Zhu Daoqian¹,Shi Kewen¹,Eimer Sylvain¹²,Wang Xinran¹,Guo Zongxia¹,Xu Yong¹²,Xiong Danrong¹,Cao Kaihua¹,Zhao Weisheng¹²^ORCID

Affiliation:

1. Fert Beijing InstituteSchool of MicroelectronicsBeijing Advanced Innovation Center for Big Data and Brain ComputingBeihang University Beijing 100191 China

2. Hefei Innovation Research InstituteBeihang University Hefei 230013 China

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202000271

Reference55 articles.

1. Spin transfer in nanomagnetic devices with perpendicular anisotropy

2. Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance