Author:
Wang Mengxing,Cai Wenlong,Cao Kaihua,Zhou Jiaqi,Wrona Jerzy,Peng Shouzhong,Yang Huaiwen,Wei Jiaqi,Kang Wang,Zhang Youguang,Langer Jürgen,Ocker Berthold,Fert Albert,Zhao Weisheng
Publisher
Springer Science and Business Media LLC
Subject
General Physics and Astronomy,General Biochemistry, Genetics and Molecular Biology,General Chemistry
Reference47 articles.
1. Ikeda, S. et al. A perpendicular-anisotropy CoFeB/MgO magnetic tunnel junction. Nat. Mater. 9, 721–724 (2010).
2. Worledge, D. C. et al. Spin torque switching of perpendicular Ta/CoFeB/MgO-based magnetic tunnel junctions. Appl. Phys. Lett. 98, 022501 (2011).
3. Hu, J. M., Li, Z., Chen, L. Q. & Nan, C. W. High-density magnetoresistive random access memory operating at ultralow voltage at room temperature. Nat. Commun. 2, 553 (2011).
4. Kim, W. et al. Extended scalability of perpendicular STT-MRAM towards sub-20nm MTJ node. In 2011 International Electron Devices Meeting 24.1.1-24.1.4 (IEEE, 2011).
5. Gajek, M. et al. Spin torque switching of 20 nm magnetic tunnel junctions with perpendicular anisotropy. Appl. Phys. Lett. 100, 132408 (2012).
Cited by
276 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献