Growth of epitaxial PrO2thin films on hydrogen terminated Si (111) by pulsed laser deposition-Reference-Cited by-同舟云学术

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Growth of epitaxial PrO2thin films on hydrogen terminated Si (111) by pulsed laser deposition

Published:1990-10-15 Issue:8 Volume:68 Page:4316-4318
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Fork D. K.,Fenner D. B.,Geballe T. H.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.346228

Reference14 articles.

1. Suitability of Rare-Earth Oxides for Use in Thin Film Transistors

2. 酸化プラセオジムセラミックスを用いた湿度センサー

3. Heteroepitaxy on Silicon by Molecular Beam Epitaxy

4. Growth of thin films by laser-induced evaporation

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1. Other Epitaxial Oxides on Semiconductors;Integration of Functional Oxides with Semiconductors;2014

2. Complex interface and growth analysis of single crystalline epi-Si(111)/Y2 O3 / Pr2 O3 /Si(111) heterostructures: Strain engineering by oxide buffer control;Surface and Interface Analysis;2011-03-08

3. Post-deposition annealing of praseodymia films on Si(111) at low temperatures;Journal of Physics: Condensed Matter;2011-03-03

4. Fabrication techniques and material properties of dielectric MgO thin films—A status review;CIRP Journal of Manufacturing Science and Technology;2010-01

5. Structural phase transition of ultra thin PrO2films on Si(111);Journal of Physics: Condensed Matter;2009-03-30

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