Suitability of Rare-Earth Oxides for Use in Thin Film Transistors
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
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1. Pentacene based thin film transistors with high-k dielectric Nd2O3 as a gate insulator;Brazilian Journal of Physics;2010-09
2. Rare-earth oxide thin films for gate dielectrics in microelectronics;Journal of Alloys and Compounds;2006-07
3. Neodymium oxide and neodymium aluminate thin films by atomic layer deposition;Thin Solid Films;2005-05
4. Formation of the Ho/CdSe(101¯0) interface;Physical Review B;1993-12-15
5. Growth of epitaxial PrO2thin films on hydrogen terminated Si (111) by pulsed laser deposition;Journal of Applied Physics;1990-10-15
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