Reaction-dispersive proton transport model for negative bias temperature instabilities-Reference-Cited by-同舟云学术

Reaction-dispersive proton transport model for negative bias temperature instabilities

Published:2005-02-28 Issue:9 Volume:86 Page:093506
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Houssa M.,Aoulaiche M.,De Gendt S.,Groeseneken G.,Heyns M. M.,Stesmans A.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1871357

Reference16 articles.

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4. S. Chakravarthi, A. T. Krishnan, V. Reddy, C. F. Machala, and S. Krishnan, in Proceedings of the International Reliab. Physics Symposium (IEEE, Piscataway, 2004), p. 273.

5. A Framework for Understanding Radiation-Induced Interface States in SiO2 MOS Structures

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