Photoinduced Hysteresis of Graphene Field-Effect Transistors Due to Hydrogen-Complexed Defects in Silicon Dioxide-Reference-Cited by-同舟云学术

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Photoinduced Hysteresis of Graphene Field-Effect Transistors Due to Hydrogen-Complexed Defects in Silicon Dioxide

Published:2019-03-07 Issue:12 Volume:11 Page:12170-12178
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Cao Guiming,Liu Xiaorong,Zhang Yantao,Liu Weihua^ORCID,Deng Minming¹,Chen Guangbing¹,Zhang Guohe,Li Quanfu,Beka Lemu Girma,Li Xin,Wang Xiaoli

Affiliation:

1. Science and Technology on Analog Integrated Circuit Laboratory, Chongqing 401332, China

Funder

National Natural Science Foundation of China

Ministry of Education of the People's Republic of China

Science and Technology on Analog Integrated Circuit Laboratory

Guangdong Province

Zhejiang Province

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.9b02400

Reference49 articles.

1. Hysteresis of Electronic Transport in Graphene Transistors

2. Correlation between the hysteresis and the initial defect density of graphene

3. Hysteresis reversion in graphene field-effect transistors

4. Photoinduced molecular desorption from graphene films

5. Investigating the Mechanism of Hysteresis Effect in Graphene Electrical Field Device Fabricated on SiO2Substrates using Raman Spectroscopy

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2. Artificial Leaky Integrate-and-Fire Sensory Neuron for In-Sensor Computing Neuromorphic Perception at the Edge;ACS Sensors;2023-05-26

3. 2022 roadmap on neuromorphic devices and applications research in China;Neuromorphic Computing and Engineering;2022-12-01

4. A highly tunable photoelectric response of graphene field-effect transistor with lateral P–N junction in channel;Nanotechnology;2022-08-05

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