Hysteresis of Electronic Transport in Graphene Transistors-Reference-Cited by-同舟云学术

Hysteresis of Electronic Transport in Graphene Transistors

Published:2010-11-03 Issue:12 Volume:4 Page:7221-7228
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Wang Haomin¹,Wu Yihong¹,Cong Chunxiao²,Shang Jingzhi²,Yu Ting²

Affiliation:

1. Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576

2. Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/nn101950n

Reference47 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. The rise of graphene

3. The electronic properties of graphene

4. Observation of electron–hole puddles in graphene using a scanning single-electron transistor

5. A self-consistent theory for graphene transport

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