Nitrogen bonding, stability, and transport in AlON films on Si
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1763230
Reference22 articles.
1. High-κ gate dielectrics: Current status and materials properties considerations
2. Stability and band offsets of nitrogenated high-dielectric-constant gate oxides
3. Remote plasma-assisted nitridation (RPN): applications to Zr and Hf silicate alloys and Al2O3
4. High-performance TaN/HfSiON/Si metal-oxide-semiconductor structures prepared by NH3 post-deposition anneal
5. Al2O3/Si3N4 stacked insulators for 0.1 μm gate metal–oxide–semiconductor transistors realized by high-density Si3N4 buffer layers
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