High-performance TaN/HfSiON/Si metal-oxide-semiconductor structures prepared by NH3 post-deposition anneal-Reference-Cited by-同舟云学术

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High-performance TaN/HfSiON/Si metal-oxide-semiconductor structures prepared by NH3 post-deposition anneal

Published:2003-03-17 Issue:11 Volume:82 Page:1757-1759
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Akbar Mohammad Shahariar,Gopalan S.,Cho H.-J.,Onishi K.,Choi R.,Nieh R.,Kang C. S.,Kim Y. H.,Han J.,Krishnan S.,Lee Jack C.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1544062

Reference7 articles.

1. Hafnium and zirconium silicates for advanced gate dielectrics

2. Electrical and physical characteristics of ultrathin hafnium silicate films with polycrystalline silicon and TaN gates

3. Application of HfSiON as a gate dielectric material

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