Dependence of leakage current on dislocations in GaN-based light-emitting diodes
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1763234
Reference18 articles.
1. Effect of dislocations on green electroluminescence efficiency in GaP grown by liquid phase epitaxy
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3. The Effect of Dislocations in Ga1 − x Al x As : Si Light‐Emitting Diodes
4. Theory of Threading Edge and Screw Dislocations in GaN
5. Near-field optical study of InGaN/GaN epitaxial layers and quantum wells
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