Near-field optical study of InGaN/GaN epitaxial layers and quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.121085
Reference16 articles.
1. Optical gain and carrier lifetime of InGaN multi‐quantum well structure laser diodes
2. Stimulated Emission by Current Injection from an AlGaN/GaN/GaInN Quantum Well Device
3. Nitride-based semiconductors for blue and green light-emitting devices
4. Open‐core screw dislocations in GaN epilayers observed by scanning force microscopy and high‐resolution transmission electron microscopy
5. Pit formation in GaInN quantum wells
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