Extraction of eight-band k ⋅ p parameters from empirical pseudopotentials for GeSn
Author:
Affiliation:
1. Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, 1001 Ta-Hsueh Road, Hsinchu 30050, Taiwan
Funder
Ministry of Science and Technology, Taiwan
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5099073
Reference54 articles.
1. Group IV Photonics: Driving Integrated Optoelectronics
2. The Past, Present, and Future of Silicon Photonics
3. Mid-infrared photonics in silicon and germanium
4. Low-temperature Ge and GeSn Chemical Vapor Deposition using Ge2H6
5. Epitaxial growth of highly compressively strained GeSn alloys up to 12.5% Sn
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