Design optimization of tensile-strained SiGeSn/GeSn quantum wells at room temperature
Author:
Affiliation:
1. School of Electronic and Electrical Engineering, University of Leeds, LS2 9JT Leeds, United Kingdom
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0042482
Reference63 articles.
1. The electronic band structure of Ge1−xSnxin the full composition range: indirect, direct, and inverted gaps regimes, band offsets, and the Burstein–Moss effect
2. Achieving direct band gap in germanium through integration of Sn alloying and external strain
3. Lasing in direct-bandgap GeSn alloy grown on Si
4. GeSn heterostructure micro-disk laser operating at 230 K
5. Electrically injected GeSn lasers on Si operating up to 100 K
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1. Investigation of α-Sn Dependence of Band Structure and Optical Emission in Si/SiyGe1-x-ySnx/Si Quantum Well Laser;Silicon;2024-03-15
2. Depth-dependent photoluminescence characteristic of GeSn/SiGeSn multi-quantum wells;Journal of Crystal Growth;2023-03
3. Lattice matched GeSn/InAlAs heterostructure: role of Sn in energy band alignment, atomic layer diffusion and photoluminescence;Journal of Materials Chemistry C;2023
4. SiGeSn Quantum Well for Photonics Integrated Circuits on Si Photonics Platform: A Review;Journal of Physics D: Applied Physics;2022-08-26
5. Design considerations of intra-step SiGeSn/GeSn quantum well electroabsorption modulators;Journal of Applied Physics;2021-10-21
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