Thickness-dependent electronic transport induced by in situ transformation of point defects in MBE-grown Bi2Te3 thin films-Reference-Cited by-同舟云学术

Thickness-dependent electronic transport induced by in situ transformation of point defects in MBE-grown Bi2Te3 thin films

Author:

Zhang Min¹,Liu Wei¹^ORCID,Zhang Cheng¹,Qiu Junhao¹,Xie Sen¹,Hua Fuqiang¹,Cao Yu¹,Li Zhi¹,Xie Hongyao²,Uher Ctirad³^ORCID,Tang Xinfeng¹

Affiliation:

1. State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China

2. Department of Chemistry, University of Northwestern, Evanston, Illinois 60208, USA

3. Department of Physics, University of Michigan, Ann Arbor, Michigan 48109, USA

Funder

The National Key Research and Development Program of China

the Natural Science foundation of China.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

Reference58 articles.

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