Improving the thermoelectric performance of p-type (BixSb1−x)2Te3 thin films via tuning the BixSb1−x layer-Reference-Cited by-同舟云学术

Improving the thermoelectric performance of p-type (Bi_xSb_1−x)₂Te₃ thin films via tuning the Bi_xSb_1−x layer

Published:2024 Issue:33 Volume:12 Page:22276-22285
ISSN:2050-7488
Container-title:Journal of Materials Chemistry A
language:en
Short-container-title:J. Mater. Chem. A

Author:

Ju Hang¹^ORCID,Zhu Beibei¹,Wang Wenya¹,Chen Lili¹,Ni Xianfeng²,Tao Li¹^ORCID

Affiliation:

1. School of Materials Science and Engineering, Jiangsu Key Laboratory of Advanced Metallic Materials, Southeast University, Nanjing 211189, People's Republic of China

2. Institute for Next Generation Semiconductor Materials, Southeast University, Suzhou 215123, People's Republic of China

Abstract

Through annealing the precursor layer BixSb1−x combined with thickness variation, the Seebeck coefficient and electrical conductivity are increased simultaneously in (BixSb1−x)2Te3. A resultant high PF of 37.78 μW cm−1 K−2 is obtained.

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Jiangsu Provincial Key Research and Development Program

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/TA/D4TA03552F

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