High-Thermoelectric Performance of Nanostructured Bismuth Antimony Telluride Bulk Alloys

Author:

Poudel Bed12345,Hao Qing12345,Ma Yi12345,Lan Yucheng12345,Minnich Austin12345,Yu Bo12345,Yan Xiao12345,Wang Dezhi12345,Muto Andrew12345,Vashaee Daryoosh12345,Chen Xiaoyuan12345,Liu Junming12345,Dresselhaus Mildred S.12345,Chen Gang12345,Ren Zhifeng12345

Affiliation:

1. Department of Physics, Boston College, Chestnut Hill, MA 02467, USA.

2. GMZ Energy, Incorporated, 12A Hawthorn Street, Newton, MA 02458, USA.

3. Department of Mechanical Engineering, Massachusetts Institute of Technology (MIT), Cambridge, MA 02139, USA.

4. Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, China.

5. Department of Physics and Department of Electrical Engineering and Computer Science, MIT, Cambridge, MA 02139, USA.

Abstract

The dimensionless thermoelectric figure of merit (ZT) in bismuth antimony telluride (BiSbTe) bulk alloys has remained around 1 for more than 50 years. We show that a peak ZT of 1.4 at 100°C can be achieved in a p-type nanocrystalline BiSbTe bulk alloy. These nanocrystalline bulk materials were made by hot pressing nanopowders that were ball-milled from crystalline ingots under inert conditions. Electrical transport measurements, coupled with microstructure studies and modeling, show that the ZT improvement is the result of low thermal conductivity caused by the increased phonon scattering by grain boundaries and defects. More importantly, ZT is about 1.2 at room temperature and 0.8 at 250°C, which makes these materials useful for cooling and power generation. Cooling devices that use these materials have produced high-temperature differences of 86°, 106°, and 119°C with hot-side temperatures set at 50°, 100°, and 150°C, respectively. This discovery sets the stage for use of a new nanocomposite approach in developing high-performance low-cost bulk thermoelectric materials.

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

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4. Thin-film thermoelectric devices with high room-temperature figures of merit

5. Quantum Dot Superlattice Thermoelectric Materials and Devices

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