Sub-2 cm/s passivation of silicon surfaces by aprotic solutions
Author:
Affiliation:
1. School of Engineering, University of Warwick, Coventry CV4 7AL, United Kingdom
2. Department of Chemistry, University of Warwick, Coventry CV4 7AL, United Kingdom
Funder
Engineering and Physical Sciences Research Council
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/5.0003704
Reference29 articles.
1. Dielectric surface passivation for silicon solar cells: A review
2. Influence of hydrogen effusion from hydrogenated silicon nitride layers on the regeneration of boron-oxygen related defects in crystalline silicon
3. Permanent annihilation of thermally activated defects which limit the lifetime of float‐zone silicon
4. Gettering of interstitial iron in silicon by plasma-enhanced chemical vapour deposited silicon nitride films
5. Temporary Surface Passivation for Characterisation of Bulk Defects in Silicon: A Review
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