Mechanisms of Silicon Surface Passivation by Negatively Charged Hafnium Oxide Thin Films-Reference-Cited by-同舟云学术

Mechanisms of Silicon Surface Passivation by Negatively Charged Hafnium Oxide Thin Films

Published:2023-01 Issue:1 Volume:13 Page:40-47
ISSN:2156-3381
Container-title:IEEE Journal of Photovoltaics
language:
Short-container-title:IEEE J. Photovoltaics

Author:

Wratten Ailish¹^ORCID,Pain Sophie L.¹^ORCID,Walker David²^ORCID,Renz Arne Benjamin¹^ORCID,Khorani Edris¹,Niewelt Tim¹^ORCID,Grant Nicholas E.¹^ORCID,Murphy John D.¹^ORCID

Affiliation:

1. School of Engineering, University of Warwick, Coventry, U.K.

2. Department of Physics, University of Warwick, Coventry, U.K.

Funder

Engineering and Physical Sciences Research Council

EPSRC COIL Project

Leverhulme Trust Research Project

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/5503869/10015785/09993726.pdf?arnumber=9993726

Reference40 articles.

1. Origin of the tunable carrier selectivity of atomic-layer-deposited TiOx nanolayers in crystalline silicon solar cells

2. Silicon Surface Passivation by Atomic Layer Deposited Hafnium Oxide Films: Trap States Investigation Using Constant Voltage Stress Studies

3. Surface Passivation and Antireflection Behavior of ALD on n-Type Silicon for Solar Cells

4. Investigation of c-Si surface passivation using thermal ALD deposited HfO2 films

5. Permanent annihilation of thermally activated defects which limit the lifetime of float‐zone silicon

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