Nitridation of silicon oxide layers by nitrogen plasma generated by low energy electron impact
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.119760
Reference23 articles.
1. Rapid thermal oxidation of silicon in N2O between 800 and 1200 °C: Incorporated nitrogen and interfacial roughness
2. Plasma nitrided oxide films as a thin gate dielectric
3. Correlation of dielectric breakdown with hole transport for ultrathin thermal oxides and N2O oxynitrides
4. Comparison of ultrathin SiO2films grown by thermal oxidation in an N2O ambient with those in a 33% O2/N2ambient
5. Nitridation of thin SiO2 films in N2 and NH3 plasmas
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