Nitridation of thin SiO2 films in N2 and NH3 plasmas
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference8 articles.
1. Advantages of thermal nitride and nitroxide gate films in VLSI process
2. Characteristics of thermally nitrided silicon dioxide film and plasma enhancement
3. Anodic nitridation of silicon and silicon dioxide
4. Ion response to plasma excitation frequency
5. Positive charge generation in thin SiO2 films during nitridation process
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1. Room temperature formation of silicon oxynitride/silicon structure by use of electrochemical method;Journal of Applied Physics;2006-08-15
2. Improvement of electrical characteristics of silicon oxynitride layers by a platinum method;Applied Surface Science;2002-10
3. Nitridation of thermal SiO2 films by radio-frequency plasma assisted electron cyclotron resonance: Effect of plasma modes and process parameters;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2001-01
4. Chapter 1 Silica, silicon nitride and oxynitride thin films;New Insulators, Devices and Radiation Effects;1999
5. Nitridation of silicon oxide layers by nitrogen plasma generated by low energy electron impact;Applied Physics Letters;1997-10-06
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