Determination of the indium content and layer thicknesses in InGaN/GaN quantum wells by x-ray scattering
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1587251
Reference53 articles.
1. Effects of growth interruption on the optical and the structural properties of InGaN/GaN quantum wells grown by metalorganic chemical vapor deposition
2. Effect of growth interrupt and growth rate on MOVPE-grown InGaN/GaN MQW structures
3. X-ray studies of group III-nitride quantum wells with high quality interfaces
4. Microstructure and composition analysis of group III nitrides by X-ray scattering
5. Measured and calculated radiative lifetime and optical absorption ofInxGa1−xN/GaNquantum structures
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