Effects of growth interruption on the optical and the structural properties of InGaN/GaN quantum wells grown by metalorganic chemical vapor deposition-Reference-Cited by-同舟云学术

Effects of growth interruption on the optical and the structural properties of InGaN/GaN quantum wells grown by metalorganic chemical vapor deposition

Published:2001-12 Issue:11 Volume:90 Page:5642-5646
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Cheong M. G.,Yoon H. S.,Choi R. J.,Kim C. S.,Yu S. W.,Hong C.-H.,Suh E.-K.,Lee H. J.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1410320

Reference20 articles.

1. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures

2. Nitride-based semiconductors for blue and green light-emitting devices

3. Increased Size of Open Hexagonally Shaped Pits due to Growth Interruption and Its Influence on InGaN/GaN Quantum-Well Structures Grown by Metalorganic Vapor Phase Epitaxy

4. High-quality In0.3Ga0.7N/GaN quantum well growth and their optical and structural properties

5. Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm

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1. The role of temperature ramp-up time before barrier layer growth in optical and structural properties of InGaN/GaN multi-quantum wells;Superlattices and Microstructures;2018-05

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3. Effects of multiple interruptions with trimethylindium-treatment in the InGaN/GaN quantum well on green light emitting diodes;Chinese Physics B;2016-09-23

4. Influences of InGaN/GaN superlattice thickness on the electronic and optical properties of GaN based blue light-emitting diodes grown on Si substrates;Acta Physica Sinica;2016

5. Influence of barrier thickness on the structural and optical properties of InGaN/GaN multiple quantum wells;Chinese Physics B;2014-05