The role of temperature ramp-up time before barrier layer growth in optical and structural properties of InGaN/GaN multi-quantum wells-Reference-Cited by-同舟云学术

The role of temperature ramp-up time before barrier layer growth in optical and structural properties of InGaN/GaN multi-quantum wells

Published:2018-05 Issue: Volume:117 Page:228-234
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Xing Yao,Zhao Degang,Jiang Desheng,Liu Zongshun,Zhu Jianjun,Chen Ping^ORCID,Yang Jing^ORCID,Liu Wei^ORCID,Liang Feng,Liu Shuangtao,Zhang Liqun,Wang Wenjie,Li Mo,Zhang Yuantao,Du Guotong

Funder

National Key R&D Program of China

Science Challenge Project

Beijing Municipal Science and Technology Project

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

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