Reduction of interface hydrogen content by partially ionized beam deposition technique
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.99590
Reference23 articles.
1. Antimony Concentration in Silicon Epitaxial Layer Formed by Partially Ionized Vapor Deposition
2. Antimony Concentration in Silicon Epitaxial Layer Formed by Partially Ionized Vapor Deposition
3. Simultaneous RHEED–AES–QMS study on epitaxial Si film growth on Si(111) and sapphire (1̄102) surfaces by partially ionized vapour deposition
4. A low-energy, ultrahigh vacuum, solid-metal ion source for accelerated-ion doping during molecular beam epitaxy
5. Ion–surface interactions during thin film deposition
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1. Method and experimental arrangement for Al thin film deposition from r.f. metal plasma with simultaneous self-ion bombardment;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2000-10
2. Texture analysis of CoGe2 alloy films grown heteroepitaxially on GaAs(100) using partially ionized beam deposition;Journal of Applied Physics;1997-06
3. Low‐temperature epitaxial growth of CoGe2(001)/GaAs(100) films using the partially ionized beam deposition technique;Applied Physics Letters;1996-03-25
4. Epitaxial quality of thin Ag films on GaAs(100) surfaces cleaned with various wet etching techniques;Applied Physics Letters;1996-01-29
5. Relationship Between The Void And Hillock Formation And The Grain Growth In Thin Aluminum Films;MRS Proceedings;1996
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