A low-energy, ultrahigh vacuum, solid-metal ion source for accelerated-ion doping during molecular beam epitaxy-Reference-Cited by-同舟云学术

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A low-energy, ultrahigh vacuum, solid-metal ion source for accelerated-ion doping during molecular beam epitaxy

Published:1984 Issue:3 Volume:2 Page:306
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Rockett A.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 44 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. References;The Foundations of Vacuum Coating Technology;2003

2. A low-energy ion beam system for studying energetic ion deposition on Silicon surfaces;Vacuum;1999-06

3. Molecular dynamics simulation of energetic atom depositions of Au/Au(100) film;Acta Physica Sinica (Overseas Edition);1999-04

4. Study on ion beam-assisted deposition of thin Au films by molecular dynamics simulation;Surface and Coatings Technology;1998-05

5. Investigation of the energetic deposition of Au (001) thin films by molecular-dynamics simulation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1998-02

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