Introduction of defect levels in resistive‐evaporatedn‐Si Schottky barrier diodes
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.343357
Reference8 articles.
1. Deep levels introduced during electron‐beam deposition of metals onn‐type silicon
2. In‐depth profiling of sputter‐induced space‐charge compensation inp‐silicon Schottky barriers
3. The subthreshold radiation effects in semiconductors
4. Deep level transient spectroscopy of defects introduced by resistive evaporation of metals on silicon
5. A system for measuring deep‐level spatial concentration distributions
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2. Semiconductor Contact Technology;Handbook of Semiconductor Interconnection Technology, Second Edition;2006-02-22
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4. Metallization-induced damage in III–V semiconductors;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1998-11
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