Chemical etching‐induced defects in n‐type ZnSe crystal grown by physical vapor transport-Reference-Cited by-同舟云学术

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Chemical etching‐induced defects in n‐type ZnSe crystal grown by physical vapor transport

Published:2003-01-27 Issue:2 Volume: Page:635-639
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Yoneta M.¹,Kato H.²,Yoshino K.³,Ohishi M.¹,Saito H.¹,Ohmori K.¹

Affiliation:

1. Department of Applied Physics, Okayama University of Science, Ridai‐cho, Okayama 700‐0005, Japan

2. Research & Development Center, Stanley Electric Co., Ltd.,1‐3‐1 Eda‐Nishi, Aoba‐ku, Yokohama 225‐0014, Japan

3. Department of Electrical and Electronic Engineering, Miyazaki University, 1‐1 Gakuen kibanadai‐nishi, Miyazaki 889‐2192, Japan

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200306189

Reference17 articles.

1. p‐type ZnSe by nitrogen atom beam doping during molecular beam epitaxial growth

2. Graded band gap ohmic contact top‐ZnSe

3. Molecular-beam epitaxial growth of p- and n-type ZnSe homoepitaxial layers

4. Lasing characteristics of low threshold ZnSe-based blue/green laser diodes grown on conductive ZnSe substrates

5. Growth and characterization of Br-doped ZnSe single crystals grown by a vertical sublimation method

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Catalyst-free synthesis of ZnO microrod arrays on SiC substrate and their tunable photoluminescence by erosion process;Journal of Alloys and Compounds;2011-06

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