p‐type ZnSe by nitrogen atom beam doping during molecular beam epitaxial growth
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.103919
Reference13 articles.
1. Characterization ofp‐type ZnSe
2. Electroluminescence in an Oxygen-Doped ZnSe p-n Junction Grown by Molecular Beam Epitaxy
3. Characterization of Nitrogen-Doped ZnSe and ZnS0.06Se0.94Films Grown by Metal-Organic Vapor-Phase Epitaxy
4. Photoluminescence properties of nitrogen‐doped ZnSe grown by molecular beam epitaxy
5. Photoluminescence properties of nitrogen‐doped ZnSe layers grown by molecular beam epitaxy with low‐energy ion doping
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