Relieved kink effects in symmetrically graded In0.45Al0.55As∕InxGa1−xAs metamorphic high-electron-mobility transistors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2817958
Reference25 articles.
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4. High-temperature thermal stability performance in /spl delta/-doped In/sub 0.425/Al/sub 0.575/As--In/sub 0.65/Ga/sub 0.35/As metamorphic HEMT
5. Characteristics of In<tex>$_0.425$</tex>Al<tex>$_0.575$</tex>As–InxGa<tex>$_1-x$</tex>As Metamorphic HEMTs With Pseudomorphic and Symmetrically Graded Channels
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1. Effect of (100) GaAs substrate misorientation on electrophysical parameters, structural properties and surface morphology of metamorphic HEMT nanoheterostructures InGaAs/InAlAs;Journal of Crystal Growth;2014-04
2. Study of the influence of strained superlattices introduced into a metamorphic buffer on the electrophysical properties and the atomic structure of InAlAs/InGaAs MHEMT heterostructures;Semiconductors;2013-04
3. On the temperature-dependent characteristics of a Pd/InAlAs based electroless-plating gate metamorphic heterostructure field-effect transistor (MHFET);Solid-State Electronics;2013-01
4. Comparative studies of MOS-gate/oxide-passivated AlGaAs/InGaAs pHEMTs by using ozone water oxidation technique;Semiconductor Science and Technology;2012-04-27
5. Investigations on Al0.2Ga0.8As/In0.2Ga0.8As MOS-pHEMTs with Different Shifted Γ-Gate Structures;ECS Journal of Solid State Science and Technology;2012
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