Multiple internal reflection infrared spectroscopy using two-prism coupling geometry: A convenient way for quantitative study of organic contamination on silicon wafers-Reference-Cited by-同舟云学术

Multiple internal reflection infrared spectroscopy using two-prism coupling geometry: A convenient way for quantitative study of organic contamination on silicon wafers

Published:2000-10-02 Issue:14 Volume:77 Page:2249-2251
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Rochat Névine,Olivier Michel,Chabli Amal,Conne Francis,Lefeuvre Georges,Boll-Burdet Christophe

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1314885

Reference6 articles.

1. Application of Ion Mobility Spectrometry to Semiconductor Technology: Outgassings of Advanced Polymers under Thermal Stress

2. Attenuated total reflection Fourier transform infrared spectroscopy study of the adsorption of organic contaminants on a hydrogen-terminated Si(111) surface in air

3. Infrared monitoring system for the detection of organic contamination on a 300 mm Si wafer

4. Infrared Study of Hydrogen in Ultra-Thin Silicon Nitride Films Using Multiple Internal Reflection Spectroscopy (MIR) in 200 mm Silicon Wafers

5. Identification and Removal of Trace Organic Contamination on Silicon Wafers Stared in Plastic Boxes

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