Author:
Thompson Phillip E.,Dietrich Harry B.,Eridon James M.
Subject
General Physics and Astronomy
Cited by
10 articles.
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1. High energy ion implantation studies on GaAs and InP;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1999-07
2. Empirical depth profile simulator for ion implantation in 6Hα‐SiC;Journal of Applied Physics;1995-06-15
3. A structure in semi-insulating GaAs substrate by high energy implantation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1995-05
4. Boron and aluminum implantation in α‐SiC;Applied Physics Letters;1994-07-04
5. High-energy (MeV) ion implantation and its device applications in GaAs and InP;IEEE Transactions on Electron Devices;1993-06