Formation of shallow donor in fluorine‐implanted silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.360973
Reference14 articles.
1. Advantages of Fluorine Introduction in Boron Implanted Shallow p+/n-Junction Formation
2. Recrystallization of implanted amorphous silicon layers. II. Migration of fluorine in BF+2‐implanted silicon
3. Anomalous diffusion of fluorine in silicon
4. Bonding of fluorine in amorphous hydrogenated silicon
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2. Harnessing reverse annealing phenomenon for shallow p-n junction formation;Journal of Applied Physics;1997-11-15
3. Dopant Activation During Solid Phase Crystallization of Poly-Si and Influence of Fluorine and Hydrogen;MRS Proceedings;1997
4. Novel Dopant Activation of Heavily Dopedp+-Si by High Current Densities;Physical Review Letters;1996-12-09
5. Silicon, ionization energies and structural information on impurities: Cu – Fe-Zn;Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part a: Group IV Elements
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