Novel Dopant Activation of Heavily Dopedp+-Si by High Current Densities
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.77.4926/fulltext
Reference16 articles.
1. A review of rapid thermal annealing (RTA) of B, BF 2 and As ions implanted into silicon
2. Furnace and Rapid Thermal Annealing of P+/n Junctions in BF 2 + ‐ Implanted Silicon
3. High concentration effects of ion implanted boron in silicon
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Computer Calculations of the Enhanced Diffusivity and Effective Activation Energy from Measured Profiles of Impurites in Silicon;Defect and Diffusion Forum;2001-04
2. Novel Dopant Activation of Heavily Dopedp+−Siby High Current Densities [Phys. Rev. Lett. 77, 4926 (1996)];Physical Review Letters;1997-12-01
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