Reduction of threading dislocations by InGaAs interlayer in GaAs layers grown on Si substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.122629
Reference18 articles.
1. Growth of Single Domain GaAs Layer on (100)-Oriented Si Substrate by MOCVD
2. Thermal annealing effects of defect reduction in GaAs on Si substrates
3. Defect reduction by thermal annealing of GaAs layers grown by molecular beam epitaxy on Si substrates
4. Interactions of dislocations in GaAs grown on Si substrates with InGaAs‐GaAsP strained layered superlattices
5. Material properties of high‐quality GaAs epitaxial layers grown on Si substrates
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