Area dependent deep depletion behavior in the capacitance-voltage characteristics of metal-oxide-semiconductor structures with ultra-thin oxides
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3664767
Reference17 articles.
1. A linear-sweep MOS-C technique for determining minority carrier lifetimes
2. Analysis of the rate of change of inversion charge in thin insulator p-type Metal-Oxide-Semiconductor structures
3. Creation and termination of substrate deep depletion in thin oxide MOS Capacitors by charge tunneling
4. Deep depletion phenomenon of SrTiO3 gate dielectric capacitor
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1. Rearrangement of Fringing Field by Sidewall Passivated Metal Gate in MIS Tunnel Diode;ECS Transactions;2017-04-26
2. Intrinsic I-V and C-V characteristics of ultra-thin oxide MOS (p) and MOS (n) structures under deep depletion;International Journal of Nanotechnology;2015
3. Convex corner induced capacitance–voltage response from depletion to deep depletion in non-planar substrate metal-oxide-semiconductor capacitors with ultra thin oxide;Thin Solid Films;2014-04
4. A wire-form emitter metal–insulator–semiconductor tunnel junction;Current Applied Physics;2014-03
5. Two states phenomenon in the current behavior of metal-oxide-semiconductor capacitor structure with ultra-thin SiO2;Applied Physics Letters;2012-08-13
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