Two states phenomenon in the current behavior of metal-oxide-semiconductor capacitor structure with ultra-thin SiO2
Author:
Affiliation:
1. Graduate Institute of Electronics Engineering/Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Reference23 articles.
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1. Three-Level MIS Antifuse Formed by Polarity-Dependent Dielectric Breakdown on 3.5-nm SiO2 for One-Time Programmable Application;IEEE Transactions on Electron Devices;2023-08
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3. Edge-Etched Al2O3 Dielectric as Charge Storage Region in a Coupled MIS Tunnel Diode Sensor;IEEE Journal of the Electron Devices Society;2020
4. High performance metal-insulator-semiconductor-insulator-metal photodetector fabricated on a silicon-on-oxide substrate;Journal of Applied Physics;2019-08-07
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