Intrinsic I-V and C-V characteristics of ultra-thin oxide MOS (p) and MOS (n) structures under deep depletion
Author:
Publisher
Inderscience Publishers
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Bioengineering
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. The effect of indium doping concentration on the electrical and dielectric properties of Al/In:ZnO/p-Si heterojunctions;Physica B: Condensed Matter;2019-11
2. Frequency-Dependent Electrical Characterization of GO-SiO2 Composites in a Schottky Device;Journal of Electronic Materials;2018-08-13
3. The structural analysis of MWCNT-SiO 2 and electrical properties on device application;Current Applied Physics;2017-09
4. Role of fringing field on the electrical characteristics of metal-oxide-semiconductor capacitors with co-planar and edge-removed oxides;AIP Advances;2016-12
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