Disorder in silicon films grown epitaxially at low temperature
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1563059
Reference23 articles.
1. Epitaxial film thickness in the low‐temperature growth of Si(100) by plasma enhanced chemical vapor deposition
2. Etching Effect of Hydrogen Plasma on Electron Cyclotron Resonance-Chemical Vapor Deposition and Its Application to Low Temperature Si Selective Epitaxial Growth
3. Thin base-layer single crystal silicon solar cells with ECR plasma CVD grown emitters
4. Crystal-state–amorphous-state transition in low-temperature silicon homoepitaxy
5. Limiting thickness h_{epi} for epitaxial growth and room-temperature Si growth on Si(100)
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